Multi-step rapid thermal annealing of boron and indium implanted Hg1−xCdxTe
Identifieur interne : 000171 ( Main/Exploration ); précédent : 000170; suivant : 000172Multi-step rapid thermal annealing of boron and indium implanted Hg1−xCdxTe
Auteurs : RBID : ISTEX:11664_1994_Article_BF02649977.pdfEnglish descriptors
Abstract
In this work, we are reporting the use of a two-step rapid thermal annealing (RTA) process (250°C, 100s+340°C, 30s) for the annealing of Hg1−xCdxTe (MCT) implanted layers over p-type (x=0.22) substrates. We report a high value of electrical activation (70%) of the indium implants after this short RTA treatment in inert Ar atmosphere. The need of two RTA steps in the annealing recipe is shown, and so the role played by each of them: the first step annihilates the implantation damage, while the second one produces the impurity electrical activation. However, for the boron case, no electrical activity was found after several annealing processes, behaving as an inert species for the case of this bulk MCT material. We also point out the change on the substrate electrical characteristics induced by the thermal treatments, and report the convenience of a subsequent low temperature furnace annealing (200°C, 72 h) to reduce back the bulk carrier concentration to values low enough to achieve an n+-p IR detector structure.
DOI: 10.1007/BF02649977
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Telecomunicación, Universidad Politécnica de Madrid</wicri:regionArea><wicri:noRegion>Universidad Politécnica de Madrid</wicri:noRegion></affiliation></author><author><name>M. Clement</name><affiliation wicri:level="1"><mods:affiliation>Dpto. Tecnología Electrónica, E.T.S.I. Telecomunicación, Universidad Politécnica de Madrid, Spain</mods:affiliation><country xml:lang="fr">Espagne</country><wicri:regionArea>Dpto. Tecnología Electrónica, E.T.S.I. Telecomunicación, Universidad Politécnica de Madrid</wicri:regionArea><wicri:noRegion>Universidad Politécnica de Madrid</wicri:noRegion></affiliation></author><author><name>T. Rodríguez</name><affiliation wicri:level="1"><mods:affiliation>Dpto. Tecnología Electrónica, E.T.S.I. Telecomunicación, Universidad Politécnica de Madrid, Spain</mods:affiliation><country xml:lang="fr">Espagne</country><wicri:regionArea>Dpto. Tecnología Electrónica, E.T.S.I. 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We report a high value of electrical activation (70%) of the indium implants after this short RTA treatment in inert Ar atmosphere. The need of two RTA steps in the annealing recipe is shown, and so the role played by each of them: the first step annihilates the implantation damage, while the second one produces the impurity electrical activation. However, for the boron case, no electrical activity was found after several annealing processes, behaving as an inert species for the case of this bulk MCT material. We also point out the change on the substrate electrical characteristics induced by the thermal treatments, and report the convenience of a subsequent low temperature furnace annealing (200°C, 72 h) to reduce back the bulk carrier concentration to values low enough to achieve an n+-p IR detector structure.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="499a194dc80fc7b5bb98c78390dc427c86f67340"><titleInfo lang="eng"><title>Multi-step rapid thermal annealing of boron and indium implanted Hg1−xCdxTe</title></titleInfo><name type="personal"><namePart type="given">J. A.</namePart><namePart type="family">López-Rubio</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Dpto. Tecnología Electrónica, E.T.S.I. Telecomunicación, Universidad Politécnica de Madrid, Spain</affiliation></name><name type="personal"><namePart type="given">J.</namePart><namePart type="family">Sangrador</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Dpto. Tecnología Electrónica, E.T.S.I. Telecomunicación, Universidad Politécnica de Madrid, Spain</affiliation></name><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Clement</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Dpto. Tecnología Electrónica, E.T.S.I. Telecomunicación, Universidad Politécnica de Madrid, Spain</affiliation></name><name type="personal"><namePart type="given">T.</namePart><namePart type="family">Rodríguez</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Dpto. Tecnología Electrónica, E.T.S.I. Telecomunicación, Universidad Politécnica de Madrid, Spain</affiliation></name><typeOfResource>text</typeOfResource><genre>Regular Issue Papers</genre><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1994-03-16</dateCreated><dateValid encoding="w3cdtf">2007-06-11</dateValid><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">In this work, we are reporting the use of a two-step rapid thermal annealing (RTA) process (250°C, 100s+340°C, 30s) for the annealing of Hg1−xCdxTe (MCT) implanted layers over p-type (x=0.22) substrates. We report a high value of electrical activation (70%) of the indium implants after this short RTA treatment in inert Ar atmosphere. The need of two RTA steps in the annealing recipe is shown, and so the role played by each of them: the first step annihilates the implantation damage, while the second one produces the impurity electrical activation. However, for the boron case, no electrical activity was found after several annealing processes, behaving as an inert species for the case of this bulk MCT material. We also point out the change on the substrate electrical characteristics induced by the thermal treatments, and report the convenience of a subsequent low temperature furnace annealing (200°C, 72 h) to reduce back the bulk carrier concentration to values low enough to achieve an n+-p IR detector structure.</abstract><subject lang="eng"><genre>Key words</genre><topic>Hall effect</topic><topic>HgCdTe implantation</topic><topic>In activation</topic><topic>rapid thermal annealing (RTA)</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1994</partNumber><partNumber>Volume: 23</partNumber><partNumber>Number: 11</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1994-11-01</dateIssued><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 28</identifier><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1994</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02649977</identifier><identifier type="matrixNumber">Art27</identifier><identifier type="local">BF02649977</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>1245</start><end>1249</end></extent></part><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1994</recordOrigin><recordIdentifier>11664_1994_Article_BF02649977.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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